Products
254nm 280nm Led UVC Light 50w 100w 200w
• photochemical reaction
• UV Curing and so on
• Printing
• Coating
• Adhesive
• Counterfeit Detection/ Security
• UV Torch
• Fluorescence Photography
• Dental Curing
Shenzhen Benwei Lighting Technology Co., Ltd. is one of the best manufacturers and suppliers of 254nm 280nm led uvc light 50w 100w 200w in China. Welcome to buy durable products for sale here and get pricelist from our factory. All customized products are with high quality and competitive price.
Application :
• photochemical reaction
• UV Curing and so on
• Printing
• Coating
• Adhesive
• Counterfeit Detection/ Security
• UV Torch
• Fluorescence Photography
• Dental Curing
• Crime Inspection
• Oil leak Detection
. UV led disinfection light
. UV lamp for photochemical reaction
Parameters:
1. Bridgelux, Epistar, Epileds Chips
2. Japanese Dow Corning Silicon packing, in accordance with environmental protection
Intematix fluorescent powder, quality assurance
3. UV wave length: UVC 254nm 280nm Led Uv Light, UVB 320nm~280nm, UVA: 400nm~320nm
4. Power: 50w 100w 150w 200w
More pictures:
254nm 280nm Led UVC Light 50w 100w 200w




LEDs UVC
Applications for ultraviolet (UV) LEDs include the treatment of water, optical data storage, communications, the detection of biological agents, and the curing of polymers. Wavelengths between 100 nm to 280 nm are referred to as the UVC portion of the UV spectrum.
The ideal wavelength for disinfection is between 260 and 270 nm, with longer wavelengths producing exponentially less germicidal efficiency. In comparison to conventional mercury lamps, UVC LEDs provide a number of advantages, including the absence of hazardous materials, instantaneous on/off switching without cycle restrictions, reduced heat consumption with focused heat extraction, and increased durability.
In the case of UVC LEDs, a greater aluminum mole percentage is necessary to generate short wavelength emission (260 nm to 270 nm for disinfection), which makes the growth and doping of the material challenging. Historically, sapphire was the most widely utilized substrate for the III-nitrides since bulk lattice-matched substrates were not easily accessible. A substantial lattice mismatch between sapphire and the high-Al-content AlGaN structure of UVC LEDs causes more non-radiative recombination (defects). The difference between the two technologies appears to be less pronounced in the UVB range and at longer wavelengths, where the lattice-mismatch with AlN is larger because higher concentrations of Ga are required. This effect seems to get worse at higher Al concentration, so sapphire-based UVC LEDs tend to drop in power at wavelengths shorter than 280 nm faster than AlN-based UVC LEDs.
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